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Ordered versus random nucleation of InN islands grown by molecular beam epitaxy

Identifieur interne : 000454 ( Chine/Analysis ); précédent : 000453; suivant : 000455

Ordered versus random nucleation of InN islands grown by molecular beam epitaxy

Auteurs : RBID : Pascal:12-0087759

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Abstract

Self-organization of two-dimensional InN nucleation islands into chains along the ?1120? directions is revealed by scanning tunneling microscopy (STM). Such alignments occur on surfaces of InN(0001) with GaN insertion layers below, i.e., in InN/GaN/InN sandwich-structures. Increasing the temperature of nucleation leads to a reduced degree of ordering of the islands. For nucleation on surfaces of homogeneous and strain-free InN films, on the other hand, randomly distributed islands are observed. The possible origin of the island-chain formation is discussed.

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Pascal:12-0087759

Le document en format XML

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<div type="abstract" xml:lang="en">Self-organization of two-dimensional InN nucleation islands into chains along the ?1120? directions is revealed by scanning tunneling microscopy (STM). Such alignments occur on surfaces of InN(0001) with GaN insertion layers below, i.e., in InN/GaN/InN sandwich-structures. Increasing the temperature of nucleation leads to a reduced degree of ordering of the islands. For nucleation on surfaces of homogeneous and strain-free InN films, on the other hand, randomly distributed islands are observed. The possible origin of the island-chain formation is discussed.</div>
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   |wiki=   *** parameter Area/wikiCode missing *** 
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   |texte=   Ordered versus random nucleation of InN islands grown by molecular beam epitaxy
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