Ordered versus random nucleation of InN islands grown by molecular beam epitaxy
Identifieur interne : 000454 ( Chine/Analysis ); précédent : 000453; suivant : 000455Ordered versus random nucleation of InN islands grown by molecular beam epitaxy
Auteurs : RBID : Pascal:12-0087759Descripteurs français
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- concept : Composé minéral.
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Abstract
Self-organization of two-dimensional InN nucleation islands into chains along the ?1120? directions is revealed by scanning tunneling microscopy (STM). Such alignments occur on surfaces of InN(0001) with GaN insertion layers below, i.e., in InN/GaN/InN sandwich-structures. Increasing the temperature of nucleation leads to a reduced degree of ordering of the islands. For nucleation on surfaces of homogeneous and strain-free InN films, on the other hand, randomly distributed islands are observed. The possible origin of the island-chain formation is discussed.
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<author><name sortKey="Xie, M H" uniqKey="Xie M">M. H. Xie</name>
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<author><name sortKey="Xue, Q K" uniqKey="Xue Q">Q. K. Xue</name>
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<front><div type="abstract" xml:lang="en">Self-organization of two-dimensional InN nucleation islands into chains along the ?1120? directions is revealed by scanning tunneling microscopy (STM). Such alignments occur on surfaces of InN(0001) with GaN insertion layers below, i.e., in InN/GaN/InN sandwich-structures. Increasing the temperature of nucleation leads to a reduced degree of ordering of the islands. For nucleation on surfaces of homogeneous and strain-free InN films, on the other hand, randomly distributed islands are observed. The possible origin of the island-chain formation is discussed.</div>
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<fC01 i1="01" l="ENG"><s0>Self-organization of two-dimensional InN nucleation islands into chains along the ?1120? directions is revealed by scanning tunneling microscopy (STM). Such alignments occur on surfaces of InN(0001) with GaN insertion layers below, i.e., in InN/GaN/InN sandwich-structures. Increasing the temperature of nucleation leads to a reduced degree of ordering of the islands. For nucleation on surfaces of homogeneous and strain-free InN films, on the other hand, randomly distributed islands are observed. The possible origin of the island-chain formation is discussed.</s0>
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